Pioneering beyond-silicon technology via residue-free field effect transistors
Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such as contact resistance, on/off ratio, and mobility are often limited by the presence of interfacial residues caused by transfer procedures. We show an ideal residue-free transfer approach using polypropylene carbonate (PPC) with a negligible … Read more